NCV5703BDR2G onsemi

Here is the English information on the NCV5703BDR2G chip:

• Breakdown Voltage: 30V
• On-Resistance: 2.0 Ω (max)
• Continuous Drain Current: 5A
• Fast Switching Speeds
• SOT-223 (SC-70) Small Outline Transistor Package

The NCV5703BDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 5A
• Low on-resistance enables high conduction with minimal losses
• Fast switching improves conversion efficiency at high frequencies
• Compact SOT-223 package saves space for board-level designs

Common Applications:

• DC/DC converters, voltage regulators below 5A loads
• Motor drivers and controllers under 5A load
• Battery chargers and protection circuits

Benefits include the ability to efficiently switch up to 5A in a small, surface mount package well-suited for space-constrained power circuit boards.

Its attributes make it suitable for various medium-current applications requiring up to 5A switching.

In summary, the NCV5703BDR2G combines a 5A rating with an ultra-compact footprint.

NCV5703BDR2G onsemi Images