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NCP606MN50T2G onsemi

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NCP606MN50T2G onsemi

Description : NCP606MN50T2G onsemi DFN-6

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Here is the English information on the NCP606MN50T2G chip:

  • Breakdown Voltage: 50V
  • On-Resistance: 2.0 mΩ (typ)
  • Continuous Drain Current: 6A
  • Fast Switching Speeds
  • PowerPAK SO-8 Package

The NCP606MN50T2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 6A
  • Extremely low on-resistance minimizes conduction losses
  • Fast switching improves efficiency at high operating frequencies
  • PowerPAK SO-8 provides strong thermal dissipation for 6A loads

Common Applications:

  • Point-of-load DC/DC converters and voltage regulators
  • Battery chargers and protection circuits below 6A loads
  • Automotive charging and load switching

Benefits include the ability to switch up to 6A with very low resistance and losses. The package supports reliable operation under continuous medium current loads.

Well-suited for applications where ultra-low resistance switching is needed, such as automotive/industrial systems.

In summary, the NCP606MN50T2G combines a very low resistance with 6A switching capacity in a thermally robust package.


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