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SI1902CDL-T1-GE3

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ZhongHao Industry Limited

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SI1902CDL-T1-GE3

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Quality SI1902CDL-T1-GE3 for sale

Quality SI1902CDL-T1-GE3 for sale

Description : SI1902CDL-T1-GE3 SOT-363-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.1 A
Rds On - Drain-Source Resistance:	235 mOhms
Vgs - Gate-Source Voltage:	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	420 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	10 ns
Height:	0.75 mm
Length:	2.05 mm
Product Type:	MOSFET
Rise Time:	13 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	6 ns
Width:	2.05 mm
Part # Aliases:	SI1902CDL-T1-BE3 SI1958DH-T1-GE3
Unit Weight:	0.000988 oz

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